требования к оборудованию на участках детских садов
Главное меню:
Интересное
требования к оборудованию на участках детских садов, General-purpose Schottky diode - Nexperia, C4D02120A Data Sheet, 1200 V, Discrete SiC Schottky Diode , Schottky Power Rectifier - onsemi, C3D04060A Data Sheet, 600 V, Discrete SiC Schottky Diode , Application of a magnetic field to ferromagnetic diodes, MBRS360T3 - Surface Mount Schottky Power Rectifier - onsemi, Product brief CoolSiC™ automotive Schottky diodes.
OAPMW5vۆeHWε7 q/%kG|]gC4 &AEK֕}!Ql$(d&#qF s 3?X)=U'6]j}p @~J,^A fq6Jf0=>ђQ`f`VOX*ďBx;$%zӘ1XteXAڿLmZȥ$5Roh֓ %Vl_gB%:ѱHts&' 9|G,Ol NmA ơ "0ZI;t4NX"8!]-a}\vB AA8!Mx#pjGї$Z쁝~Եew 'c(7&ͩ V!Y5d-nJK ? m:Cǹ[LoƁZ"X3(VG 㡟3"uH>0.f4> [;j~BL=in_`|K:d LI[zg%'CڨUijMDmj ]jsU1 %Kqh7I:i5 3wǞv /(m Ǿg 0V4njwXU15C \$g¬)eOз`I:m(jHUY :gy8¤ 3tJ-NYueA' .Pt KZ sZTH>:O}φk!1D~شJgc䌢%\L'!Ȅ P `q9gY !L,{/=W!j"kNƤc͚S{`מ?HYEQZZIc/ "3j>`@Ye_ݜF7ĵFZwCEn1ɴBHWu{F7Q[Z#cc_9 p2iA8WUz١@IJ[V, General-purpose Schottky diode 19 October 2022 Product data sheet 1. General description General-purpose Schottky diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Low leakage current • Low capacitance • Reverse voltage: VR ≤ 100 V, Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination.
Schottky Power Rectifier Surface Mount Power Package MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, SBRS81100N, SBRS8190N Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay , Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination, This metal–insulator-metal (MIM) diode, comprised of Nb–NbO x –Co–Au, was designed and fabricated to enable a change in electrical response in the presence of an applied magnetic eld. A “control” diode comprised of Nb–NbO x –Au was also fabricated and used to assess the role of the ferromagnetic layer (Co)., Schottky Power Rectifier MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact., CoolSiC™ automotive Schottky diodes Combining performance and robustness The 5th generation CoolSiC™ automotive Schottky discrete diode family has been devel-oped for current and future on-board charger applications in hybrid and electric vehicles. It is specifically designed to meet the high requirements demanded by the automotive, .